Diamond Growth
Y. Bar-Yam and T. D. Moustakas: Defect induced stabilization of diamond films, Nature 342, 786, 1989. PDF file
C. T. Capraro and Y. Bar-Yam: Thin film growth with selective etching: Multiple regrowth model for diamond films, Journal of Comp. Materials Science 1,169-176, 1993.
Y. Bar-Yam, T. Lei, T. D. Moustakas, D. C. Allan and M. P. Teter: Quasi-Equilibrium Nucleation and Growth of Diamond and Cubic Boron-Nitride, in Wide Band Gap Semiconductors, (T. D. Moustakas, J. I. Pankove, and Y. Hamakawa) MRS Symp. Proc. Vol 242 (1992) p. 335.
Y. Bar-Yam and T. D. Moustakas: Theory and experiment: Defect stabilization of diamond films by multiple regrowth, J. T. Glass, R. Messier, N. Fujimori eds. Mater. Res. Soc. Symp. Proc. Vol. 162, 201, 1990.
Dynamics and Thermodynamics
Y. Bar-Yam, D. Kandel and E. Domany: Structure and phase transitions of grown and equilibrated alloys, Phys. Rev. B 41, 12869, 1990.
Superconductivity
Y. Bar-Yam: Two-component superconductivity:
I. Introduction and phenomenology, Phys. Rev. B 43, 359, 1991. PDF file
II. Cu-O high-Tc superconductors, Phys. Rev. B 43, 2601, 1991. PDF file
Y. Bar-Yam: Lattice Effects and the Mechanism of High Temperature Superconductivity, in Lattice Effects in High-Tc Superconductors, Y. Bar-Yam, T. Egami, J. Mustre-de Leon and A. Bishop eds., (World-Scientific, 1992) p. 177.
Y. Bar-Yam: Two-Component Theory and Dynamical Structural Correlations, in Electronic Structure and Mechanisms for High-Tc Superconductivity, J. Ashkenazi and G. Vezzoli eds., (Plenum, New York, 1992) p. 561-8.
Y. Bar-Yam: Lattice Effects in Two-Component Superconductors, in Lattice Effects in High-Tc Superconductors , Y. Bar-Yam, T. Egami, J. Mustre-de Leon and A. Bishop eds. (World-Scientific, 1992) p. 432.
Y. Bar-Yam: Macroscopic Structural Coherence in Two-Component Superconductivity, Physica C 185-189, 1455, 1991.
Y. Bar-Yam: Two-fluid superconductors, in High Temperature Superconductors: Fundamental Properties and Novel Materials Processing, D. Christen, J. Narayan L. Schneemeyer eds., Mater. Res. Soc. Symp. Proceedings Vol. 169, 27, 1990.
Y. Bar-Yam: Two-component superconductivity, in Recent Progress in Many-Body Theories, Y. Avishai ed. (Plenum, New York, 1990), p. 65.
Amorphous materials
Y. Bar-Yam, D. Adler, and J. D. Joannopoulos: Structure and Electronic States in Disordered Systems, Phys. Rev. Lett. 57, 467-470, 1986. PDF file
X. M. Wang, Y. Bar-Yam, D. Adler and J. D. Joannopoulos: DC conductivity and the Meyer-Neldel Rule in a-Si:H, Phys Rev. B 38, 1601, 1988.
F. R. Shapiro, Y. Bar-Yam and M. Silver: Interpretation of Transient Currents in Amorphous Silicon Hydride p-i-n and n-i-n Devices, IEEE Trans. El. Dev. 36, 2785-2788, 1989.
F. R. Shapiro and Y. Bar-Yam: Transient Response of Amorphous Semiconductor Devices: A Theoretical Microscopic Simulation Approach to the Physics of Disordered Systems, Amorphous Silicon Technology, edited by Y. Hamakawa, P. G. LeComber, A. Madan, P. C. Taylor, and M. J. Thompson, 1988.
F. R. Shapiro and Y. Bar-Yam: The Effect of Variations from a Purely Exponential Band Tail on Time-of-Flight Experiments, in Topics in Non-Crystalline Semiconductors, edited by H. Fritzsche and A.-L. Jung, (Beijing University of Aeronautics and Astronautics, Beijing, China) 75, 1988.
F. R. Shapiro and Y. Bar-Yam: Microscopic Transient Simulation of Semiconductors and Insulators, Journal of Applied Physics 64, 2185, 1988.
Y. Bar-Yam, F. R. Shapiro, X. M. Wang and J. D. Joannopoulos: Theories of disorder: From microscopic properties to macroscopic phenomena, Proceedings of the 2nd International Symposium on Physics and Applications of Amorphous Semiconductors Torino, Sept. 1988, F. Demichelis ed. (World Scientific, 1989).
Y. Bar-Yam, D. Adler and J. D. Joannopoulos: Control and Elimination of Defect Formation in a–Si:H, Proceedings of the International Symposium on Physics and Applications of Amorphous Semiconductors, Torino, Sept. 1987, F. Demichelis ed. (World Scientific, 1988)
Y. Bar-Yam and D. Adler and J. D. Joannopoulos: Equilibrium Ensemble Theory of Disordered Systems, Proceedings of the International Symposium on Physics and Applications of Amorphous Semiconductors, Torino, Sept. 1987, F. Demichelis ed. (World Scientific, 1988).
Y. Bar-Yam, D. Adler and J. D. Joannopoulos: Electronic States in Amorphous Solids, Liquids and Alloys, in Amorphous Silicon Semiconductors - Pure and Hydrogenated Materials Research Society Conference Proceedings Vol. 95, (A. Madan, M. Thompson, D. Adler and Y. Hamakawa eds.), 1987.
Y. Bar-Yam, J. D. Joannopoulos, and D. Adler: Photo-Induced Degradation and Stability in Semiconductor Devices, in A.I.P Conf. Proceedings, Int. Conf. on Stability of Amorphous Silicon Alloy Materials and Devices, 1987.
J. D. Joannopoulos, D. Adler and Y. Bar-Yam: Elimination of Photo-Induced Degradation in Semiconductor Devices, in Disordered Semiconductors, M. Kastner, G. A. Thomas, and S. R. Ovshinsky eds. Plenum, 1987.
Y. Bar-Yam, J. D. Joannopoulos, and D. Adler: Determination of the effective correlation energy of defects in semiconductors, Phys. Rev. Lett. 55, 138, 1985. PDF file
See also papers on defects in amorphous materials below
Surfaces
E. Kaxiras, Y. Bar-Yam, J. D. Joannopoulos and K. C. Pandy: Ab-initio theory of polar semiconductor surfaces II: 2x2 reconstructions and related phase transitions of GaAs (111), Phys Rev. B 35 9636 (1987)
E. Kaxiras, Y. Bar-Yam, J. D. Joannopoulos and K. C. Pandy, Ab-initio theory of polar semiconductor surfaces I: Methodology and the 2x2 reconstructions of GaAs (111), Phys Rev. B 35, 9625, 1987.
E. Kaxiras, K. C. Pandey, Y. Bar-Yam, and J. D. Joannopoulos: Role of Chemical Potentials in Surface Reconstruction: A New Model and Phase Transition on GaAs(111)2
E. Kaxiras, Y. Bar-Yam, J. D. Joannopoulos and K. C. Pandy: Variable Stoichiometry Surface Reconstruction: New Models and Phase Transitions on GaAs {111}2x2, Proceedings of the 18th international conf. on the physics of semiconductors, Stockholm, Aug. 1986.
E. Kaxiras, Y. Bar-Yam, J. D. Joannopoulos, and K. C. Pandey: Variable stoichiometry surface reconstructions: New models for GaAs (1-bar1-bar1-bar) (2
E. Kaxiras, Y. Bar-Yam, J. D. Joannopoulos and K. C. Pandy: (2x2) Reconstructions of the [111] Polar Surfaces of GaAs, Phys. Rev. B. 33, 4406, 1986.
Defects and defect dynamics
M. Needels, J. D. Joannopoulos, Y. Bar-Yam and S. T. Pantelides: Oxygen Complexes in Silicon, Phys. Rev. B 43, 4208, 1991.
M. Needels, J. D. Joannopoulos, Y. Bar-Yam, S. T. Pantelides, and R. H. Wolfe: The Enchanting Properties of Oxygen Atoms in Silicon, Mater. Res. Soc. Symp. Proc. Vol. 209, 103, 1990.
Y. Bar-Yam, S. T. Pantelides, J. D. Joannopoulos, D. C. Allan and M. P. Teter: The Oxygen Vacancy and the E1' Center in SiO2 in SiO2 and its interfaces edited by S. T. Pantelides and G. Lucovsky, Materials Research Society Conference Proceedings Vol. 105, 223, 1988.
Y. Bar-Yam, S. T. Pantelides and J. D. Joannopoulos: Ab-initio Theory of Highly-Electronegative First Row Elements, Phys Rev. B 39, 3396, 1989.
Y. Bar-Yam: Defects in Disordered Systems, Proceedings of the 2nd International Symposium on Physics and Applications of Amorphous Semiconductors, Torino, Sept. 1988, F. Demichelis ed. (World Scientific, 1989.)
D. C. Allan, M. P. Teter, J. D. Joannopoulos, Y. Bar-Yam, and S. T. Pantelides: Defect Studies in Silicon Dioxide by Local Density Approximation Total Energy Methods, Atomic Scale Calculations in Materials Science, edited by J. Tersoff, D. Vanderbilt, V. Vitek (Materials Research Society Proceedings, Vol. 141, Pittsburgh, PA), 1989.
J. Bernholc, A. Antonelli, T. M. Del Sole, Y. Bar-Yam, and S. T. Pantelides: Mechanism of self-diffusion in diamond, Phys. Rev. Lett. 61, 2689-2692, 1988. PDF file
C. G. Van de Walle, P. J. H. Denteneer, Y. Bar-Yam, and S. T. Pantelides: Hydrogen Diffusion and Passivation of Shallow Impurities in Crystalline Silicon, Proceedings of the Third Int. Conf. on Shallow Impurities in Semiconductors, Linkoping Sweden (1988); IOP Series 95: 405-414, 1989.
C. G. Van de Walle, Y. Bar-Yam, and S. T. Pantelides: Theory of Hydrogen Diffusion and Reactions in Crystalline Silicon, Phys. Rev. Lett. 60, 2761-2764, 1988. PDF file
C. G. Van de Walle, Y. Bar-Yam, and S. T. Pantelides: Theory of Hydrogen Reactions in Silicon, in Defects in Electronic Materials, edited by M. Stavola, S. J. Pearton, G. Davies Materials Research Society Conference Proceedings Vol. 104, 253, 1988.
C. G. Van de Walle, Y. Bar-Yam, F. R. McFeeley and S. T. Pantelides: Theoretical Investigations of Fluorine-Silicon Systems, Proc. of American Vacuum Society, 1987.
Y. Bar-Yam and J. D. Joannopoulos: Theories of Defects in Amorphous Semiconductors, Journal of Non-Crystalline Solids, Vol. 97, 467, 1987.PDF file
Y. Bar-Yam and J. D. Joannopoulos: Theory of Microscopic Structures and Experimental Signatures of Defects in Crystalline and Amorphous Semiconductors, Proceedings of the 18th International Conf. on the Physics of Semiconductors, Stockholm, Aug. 1986.
J. D. Joannopoulos and Y. Bar-Yam: Ab-Initio Theory of Defect Structure in a-Si:H, Proceedings of the VII winter meeting on Low Temperature Physics, Cuernavaca, Mexico, 1986.
Y. Bar-Yam and J. D. Joannopoulos: Ab-Initio Theory of Defects in Crystalline and Amorphous Semiconductors, Proc. of the 14th International Conf. on Defects in Semiconductors, Paris, Aug. 1986,
Y. Bar-Yam and J. D. Joannopoulos: Dangling Bond in a
Y. Bar-Yam and J. D. Joannopoulos: Gallium Vacancy and EL 2 in GaAs, Phys. Rev. Lett. 56, 1213, 1986. PDF file
Y. Bar-Yam and J. D. Joannopoulos: Correlation Energy of Deep Level Traps in a-Si:H, Proceedings of the 11th Int. Conf. on Amorphous and Liquid Semiconductors," Rome, Sept. 1985. J. of Non. Crys. Solids 77, 99, 1985.PDF file
Y. Bar-Yam, J. D. Joannopoulos, and D. Adler: Determination of the effective correlation energy of defects in semiconductors, Phys. Rev. Lett. 55, 138, 1985. PDF file
Y. Bar-Yam and J. D. Joannopoulos: The Entropy of Defects and Diffusion in Silicon, in Microscopic Identification of Electronic Defects in Semiconductors, edited by N. M. Johnson, S. G. Bishop, G. D. Watkins, Materials Research Society Conference Proceedings Vol. 46, 123, 1985.
Y. Bar-Yam and J. D. Joannopoulos: Microscopic theory of low and high temperature dynamics of intrinsic defects in silicon, Proceedings of the 13th International Conf. on Defects in Semiconductors, Coronado, Aug. 1984. J. of Electron. Mater. 14a, 261, 1985.
Y. Bar-Yam and J. D. Joannopoulos: Intrinsic defects in silicon: Formation and migration energies, Proceedings of the 17th International Conf. on the Physics of Semiconductors, San Francisco, Aug. 1984.
Y. Bar-Yam and J. D. Joannopoulos: Silicon self-interstitial migration: Multiple paths and charge states, Phys. Rev. B. 30, 2216, 1984.
Y. Bar-Yam and J. D. Joannopoulos: Electronic Structure and Total Energy Migration Barriers of Silicon Self-Interstitials, Phys. Rev. B. 30, 1844, 1984.
Y. Bar-Yam and J. D. Joannopoulos: Barrier to Migration of the Silicon Self-Interstitial, Phys. Rev. Lett. 52, 1129-1132, 1984. PDF file